Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 × 10-5 A/cm2.     

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.     

Analysis of statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(4S) atoms

On the basis of the mean value of electrical breakdown time delay and the standard deviation of electrical breakdown time delay σ dependence on the afterglow period τ, the mechanisms which dominantly influence to breakdown initiation in nitrogen were separated. It was shown that the positive ions formed in mutual collision of long‐lived metastable molecules have a dominant role in breakdown initiation for τ values up to 70 ms. The metastable molecules were derived from previous breakdown and discharge. In this case σ ≪ t_d and the total time delay t_d is approximately equal to formative time t_f which decreases in value with the increase of overvoltage. When positive ions have a dominant role in the breakdown initiation the Gaussian distribution describes data of t_d ≈ t_f very well. For τ > 1 s, N (⁴S) atoms formed in previous breakdown and discharge, have a dominant role in the breakdown initiation. Then, σ ≈ and Laue's distribution, which is valid for statistical time delay t_s, describes t_d data very well (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

碳纳米管场发射特性的研究

自1995年首次报道碳纳米管电子场发射实验研究以来,碳纳米管被认为是最具应用潜力的电子场发射极,特别是近几年碳纳米管合成技术的发展更促进了碳纳米管作为场发射电子源的研究。本论文对碳纳米管作为场发射电子源的研究进行了系统的总结,简洁地介绍了碳纳米管电子场发射研究的方法、理论、主要发现及意义。     

磁通量子比特qubit信号强度随势垒偏置电压的变化

在20mK极低温下,测量了超导磁通量子比特的环流方向,并测到量子比特(qubit)信号.通过改变磁通量子比特的势垒高度,得到qubit信号强度随势垒高度的变化的实验数据并建立理论模型解释了实验现象.     

水热法制备注射器样纳米氧化锌场发射特性的研究

应用水热法制备了注射器样纳米结构氧化锌样品,室温下测量其真空场发射特性.根据测量数据,基于Fowler-Nordheim方程,估算了场发射效应增强因子,观察到增强因子随外加电压增加取值的两阶段性;结合样品的光致发光谱和能量散射谱,应用半导体材料中强场效应理论,结合场发射电流密度测量系统的串联电路等效,研究样品中空位对场发射特性影响机理.结果表明,制备过程中形成的锌、氧空位,在样品中产生了相当于杂质态的缺陷能级,缺陷能级与样品形貌共同作用,使样品较大的增强因子随场强增加而阶跃性下降.最后,用电化学沉淀法和气 关键词： 场发射 强场效应 缺陷态 串联等效     

两端叠层结构的中长波量子阱红外探测器

采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原 关键词： 电压调制 同时响应 量子阱红外探测器 双波段     

红外光激发作用下分子导电纳米结的非弹性电流研究

将"金属-单分子-金属"模型化为分子导电纳米结,应用扩展主方程方法研究了红外光激发作用下弱耦合分子导电纳米结的非弹性电流的传导过程.分别采用偶极跃迁的指数耦合、平方耦合以及线性耦合模型描述红外光场与分子的相互作用,研究了不同光场作用下非弹性电流与所加电压的关系,并讨论了分子内振动能重新分布效应对电流-电压特性的影响. 关键词： Franck-Condon阻滞 非弹性电流 电流-电压特性 红外光激发     

漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响

结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si_1－βGe_β中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值. 关键词： 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型     

产电对微生物燃料电池参数的影响

测试了pH值和电导率的变化规律,分析了MFC开路电压的变化情况,为改善MFC的性能提供理论依据.采用驯化培养的菌种,MFC启动时间更短;在恒温、高温和高底物浓度条件下,开路电压更高、更稳.产物在阳极液中的积累会降低开路电压.阴极液和阳极液的pH值的差值与电流正相关.阳极液的电导率会减小,而阴极液的电导率会增大;阳极液中...